SKM1400GB12P4 ? by semikron rev. 1.0 ? 21.12.2016 1 semitrans ? 10 gb igbt4 modules SKM1400GB12P4 features ? symmetrical current sharing ? low-inductive module design ? high mechanical robustness ? ul recognized, file no. e63532 typical applications* ?motor drives ?ups systems ?solar inverters absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 1200 v i c t j = 175 c t c =25c 2165 a t c =100c 1453 a i cnom 1400 a i crm i crm = 2xi cnom 2800 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse diode v rrm t j =25c 1200 v i f t j = 175 c t c =25c 1768 a t c =100c 1135 a i fnom 1400 a i frm i frm = 2xi fnom 2800 a i fsm t p = 10 ms, sin 180, t j =25c 7296 a t j -40 ... 175 c module t stg -40 ... 150 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c = 1400 a v ge =15v chiplevel t j =25c 1.75 2.06 v t j =150c 2.18 2.44 v v ce0 chiplevel t j =25c 0.80 0.90 v t j =150c 0.70 0.80 v r ce v ge =15v chiplevel t j =25c 0.68 0.83 m t j =150c 1.06 1.17 m v ge(th) v ge =v ce , i c = 49.2 ma 5 5.8 6.5 v i ces v ge =0v, v ce = 1200 v, t j =25c 6ma c ies v ce =25v v ge =0v f=1mhz 81.6 nf c oes f=1mhz 5.28 nf c res f=1mhz 4.50 nf q g v ge = - 8 v...+ 15 v 7500 nc r gint t j =25c 0.8 t d(on) v cc = 600 v i c = 1400 a v ge = +15/-15 v r g on =1 r g off =1 di/dt on =11ka/s di/dt off = 6.9 ka/s du/dt = 3300 v/s l s =36nh t j =150c 353 ns t r t j =150c 119 ns e on t j =150c 150 mj t d(off) t j =150c 803 ns t f t j =150c 171 ns e off t j =150c 277 mj r th(j-c) per igbt 0.02 k/w r th(c-s) per igbt ( grease =0.81 w/(m*k)) 0.008 k/w
SKM1400GB12P4 2 rev. 1.0 ? 21.12.2016 ? by semikron semitrans ? 10 gb igbt4 modules SKM1400GB12P4 features ? symmetrical current sharing ? low-inductive module design ? high mechanical robustness ? ul recognized, file no. e63532 typical applications* ?motor drives ?ups systems ?solar inverters characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 1400 a v ge =0v chiplevel t j =25c 2.06 2.37 v t j =150c 2.04 2.35 v v f0 chiplevel t j =25c 1.30 1.50 v t j =150c 0.90 1.10 v r f chiplevel t j =25c 0.54 0.62 m t j =150c 0.81 0.89 m i rrm i f = 1400 a di/dt off =11ka/s v ge =15v v cc = 600 v t j =150c 1014 a q rr t j =150c 214 c e rr t j =150c 85 mj r th(j-c) per diode 0.033 k/w r th(c-s) per diode ( grease =0.81 w/(m*k)) 0.01 k/w module l ce 10 nh r cc'+ee' t c =25c 0.2 m rth (c-s)1 calculated without thermal coupling ( grease =0.81 w/(m*k)) 0.0022 k/w rth (c-s)2 including thermal coupling, ts underneath module ( grease =0.81 w/(m*k)) 0.0035 k/w m s to heat sink m5 4 6 nm m t to terminals m8 810nm to terminals m4 1.8 2.1 nm w 1250 g temperature sensor r 100 t c =100c (r 25 =5 k ) 493 5% b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k
SKM1400GB12P4 ? by semikron rev. 1.0 ? 21.12.2016 3 fig. 1: output characteristics igbt (typical); i c = f (v ce ); v ge = 15v fig. 2: output characteristics igbt (typical); i c = f (v ce ); t j = 150 c fig. 3: switching los ses igbt (typical) e=f(i c ) fig. 4: switching losses igbt (typical) e=f(r g ) fig. 5: transient thermal impedance igbt fig. 6: rbsoa igbt
SKM1400GB12P4 4 rev. 1.0 ? 21.12.2016 ? by semikron fig. 7: forward characteri stics diode (typical); i f =f(v f ) fig. 8: switching losses diode (typical) e=f(i f ) fig. 9: switching los ses diode (typical) e=f(r g ) fig. 10: transient th ermal impedance diode fig. 11: soa diode fig. 12: ntc characteristics (typical)
SKM1400GB12P4 ? by semikron rev. 1.0 ? 21.12.2016 5 gb
SKM1400GB12P4 6 rev. 1.0 ? 21.12.2016 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. *important information and warnings the specifications of semikron products may not be consid ered as guarantee or assurance of product characteristics ("beschaffenheitsgarantie"). the specifications of semikron products describe only the usual characteristics of products to be expected in typical applications, which may still vary depe nding on the specific application. therefore, products must be tested for the re spective application in advance. application adjustments may be necessary. the user of semikron products is responsible for the safety o f their applications embedding semikron pr oducts and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of semi kron products become faulty. the user is responsible to make su re that the applicat ion design is compliant with all applicable laws, regulati ons, norms and standards. exce pt as otherwise explicitly approved by semikron in a written document signed by authorized representatives of semikron, semikr on products may not be used in any applications where a failur e of the product or any consequences of the use thereof can reasonably be expected to result in person al injury. no representation o r warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including wi thout limitation, warranties of non-infringement of intellectual property rights of any third party. semikron does not assume any liability arisi ng out of the applications or use of any product; neither does it convey an y license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. semikron makes no re presentation or warranty of non- infringement or alleged non-infr ingement of intellectual property rights of any third party which may arise fr om applications. due to technica l requirements our products m ay contain dangerous substances. for information on the types in question pl ease contact the nearest semikron sales office. this document supersedes and replaces all information previously supplied and ma y be superseded by updates. semikron reserves the right to ma ke changes.
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